Method for manufacturing semiconductor device, semiconductor...

Details Method for manufacturing semiconductor device, semiconductor... Method for manufacturing semiconductor device, semiconductor...

2006-12-22

2010-11-30

Brewster, William M. (Department: 2823)

Semiconductor device manufacturing: process

With measuring or testing

Optical characteristic sensed

C438S649000

Reexamination Certificate

active

07842520

ABSTRACT:
A manufacturing method of a semiconductor device capable of efficiently inspecting whether a metal silicide layer is sufficiently formed is provided. The manufacturing method is provided with the steps of forming a metal layer over a semiconductor layer containing silicon; forming a metal silicide layer over a surface of the semiconductor layer by heating the semiconductor layer and the metal layer; generating image data by performing color imaging of the metal silicide layer from above the metal silicide layer; calculating saturation of the metal silicide layer by processing the image data; and judging the formation amount of the metal silicide layer on the basis of the calculated saturation.

REFERENCES:
patent: 5091963 (1992-02-01), Litt et al.
patent: 6406743 (2002-06-01), Lee et al.
patent: 05-283696 (1993-10-01), None
patent: 08-327497 (1996-12-01), None
patent: 11-145231 (1999-05-01), None

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