Method for manufacturing semiconductor device isolation region

Details Method for manufacturing semiconductor device isolation region Method for manufacturing semiconductor device isolation region

1995-04-28

1997-10-14

Fourson, George

Fishing, trapping, and vermin destroying

1566361, 1566551, H01L 2176

Patent

active

056772297

ABSTRACT:
A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface of the projecting portion in a sloped shape, which is from the top portion of the projecting portion to the main surface.

REFERENCES:
patent: 4160991 (1979-07-01), Anantha et al.
patent: 4707218 (1987-11-01), Giammarco et al.
patent: 5229316 (1993-07-01), Lee et al.
patent: 5346584 (1994-09-01), Nasr et al.
patent: 5506168 (1996-04-01), Moreta et al.

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