Method for manufacturing semiconductor device having via holes

Details Method for manufacturing semiconductor device having via holes Method for manufacturing semiconductor device having via holes

2007-10-30

2007-10-30

Dang, Trung (Department: 2823)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S718000, C257SE21054, C257SE21232

Reexamination Certificate

active

11472384

ABSTRACT:
In a method for manufacturing a semiconductor device wherein via holes are formed in an SiC substrate, a stacked film consisting of a Ti film and an Au film is formed on the back face of the SiC substrate, and a Pd film is formed thereon. Then, an Ni film is formed by non-electrolytic plating, using the Pd film as a catalyst. Thereafter, via holes penetrating through the SiC substrate are formed by etching, using the Ni film as a mask.

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