Active solid-state devices (e.g. – transistors – solid-state diode – Integrated circuit structure with electrically isolated... – Including dielectric isolation means
Patent
1994-01-10
1995-04-04
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Integrated circuit structure with electrically isolated...
Including dielectric isolation means
257 74, H01L 2712
Patent
active
054029899
ABSTRACT:
A semiconductor device is manufactured by forming an epitaxial layer 22 insulated from a silicon substrate 2, and forming a device in the epitaxial layer 22. On the semiconductor substrate 2, a silicon dioxide layer 4 is formed (FIG. 2A). Then the silicon dioxide layer 4 is provided with openings 14 (FIG. 2D). Silicon is grown until it protrudes from the openings 14 to thereby form a silicon seed crystal layer 16 (FIG. 2E). Next, a silicon nitride layer 18 is formed on the surface of the silicon seed crystal layer 16 and thereafter is oxidized. A field oxide layer 20 is thereby bonded at the lower portion of the openings 14, the silicon seed crystal layer 16 being insulated from the silicon substrate 2. Thereafter, epitaxial growth is effected from the silicon seed crystal layer 16, obtaining an epitaxially grown layer 22.
REFERENCES:
patent: 5040043 (1991-08-01), Ohno et al.
"Lateral Epitaxaial Overgrowth of Silicon on SiO.sub.2 ", Journal of Electrochemical Society Solid-State Science and Technology, by D. D. Rathman et al, Oct. 1982, pp. 2303-2306.
"New SOI-Selective Nucleation Epitaxy", Preliminary Bulletin for the 48th Fall Academic Lecture 1987 by the Applied Physics Society, 19p-Q-15, by Ryudai Yonehara et al, p. 583.
Munson Gene M.
Rohm & Co., Ltd.
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