Fishing – trapping – and vermin destroying
Patent
1994-03-15
1996-05-21
Breneman, R. Bruce
Fishing, trapping, and vermin destroying
437126, 117 95, 117913, 117923, 117951, H01L 2120
Patent
active
055189539
ABSTRACT:
A semiconductor device is manufactured by forming an epitaxial layer (22) insulated from a silicon substrate (2), and forming a device in the epitaxial layer (22). On the semiconductor substrate (2), a silicon dioxide layer (4) is formed (FIG. 2A). Then the silicon dioxide layer (4) is provided with openings (14) (FIG. 2D). Silicon carbide is grown until it protrudes from the openings (14) to thereby form a silicon carbide seed crystal layer (16) (FIG. 2E). Next, oxidation is carried out, allowing a field oxide layer (20) to be connected at the portion under the openings (14) and the silicon carbide seed crystal layer (16) to be insulated from the silicon substrate (2). Thereafter, epitaxial growth is effected from the silicon carbide seed crystal layer (16). The growth is stopped before silicon grown layers (22) connect to one another, thus obtaining epitaxially grown layers (22) having regions which are separate from one another. The MOS device is formed in this epitaxially grown layer (22). The silicon carbide grown layer (22) is isolated from the silicon substrate (2) and formed as regions isolated from one another, having a uniform plane bearing. Accordingly, the layer (22) causes no electrostatic capacitance due to the absence of a pn junction with the silicon substrate (2) or with an adjacent layer (22), allowing high-speed operation of the device. Moreover, the unique plane bearing facilitates control during the manufacturing process.
REFERENCES:
patent: 3508980 (1970-04-01), Jackson, Jr. et al.
patent: 4760036 (1988-07-01), Schubert
patent: 4772927 (1988-09-01), Saito et al.
patent: 4902637 (1990-02-01), Kondou et al.
patent: 4983538 (1991-01-01), Gotou
patent: 4997787 (1991-03-01), Eshita
patent: 5028976 (1991-07-01), Ozaki et al.
patent: 5296086 (1994-03-01), Takasu
patent: 5308445 (1994-05-01), Takasu
"Lateral Epitaaxial Overgrowth of Silicon on SiO.sub.2 ", by D. D. Rathman et al, Journal Of Electro-Chemical Society Solid-State Science And Technology, Oct., 1982, p. 2303.
"New SOI-Selective Nucleation Epitaxy" by Ryudai Yoinehara et al, Preliminary Bulletin for the 48th Fall Academic Lecture 1987 by the Applied Physics Society, 19p-Q-15, p. 583.
Chaudry et al., "Fabrication and properties of polycrystalline-SiC/Si structures for Si Heterojunction Devices", Applied Physics Letters, vol. 59, No. 1, Jul. 1991, pp. 51-53.
Breneman R. Bruce
Fleck Linda J.
Rohm & Co., Ltd.
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