Method for manufacturing semiconductor device having grown layer

Details Method for manufacturing semiconductor device having grown layer Method for manufacturing semiconductor device having grown layer

1995-03-31

1996-10-15

Breneman, R. Bruce

Single-crystal, oriented-crystal, and epitaxy growth processes;

Processes joining independent crystals

117935, 437190, C30B 2502

Patent

active

055650295

ABSTRACT:
A semiconductor device produced by forming an epitaxial layer insulated from a silicon substrate, and forming a device in the epitaxial layer. According to the process a silicon dioxide layer is formed on a semiconductor substrate. Then the silicon dioxide layer is provided with openings therein. Silicon is made to grow until it protrudes from the openings to thereby form a silicon seed crystal layer. Next, a silicon nitride layer is formed on the surface of the silicon seed crystal and thereafter is oxidized. A field oxide layer is thereby bonded at the lower portion of the openings so that the silicon seed crystal layer is insulated from the silicon substrate. Thereafter, epitaxial growth is effected from the silicon seed crystal layer. The growth is stopped just before silicon growth layers connect to one another, thus obtaining epitaxial grown layer having regions which are separated from one another. The device is formed in the epitaxially grown layer. The silicon grown layer is isolated from the silicon substrate and has a uniform plane bearing, thus preventing electrostatic capacitance caused by a pn junction with the silicon substrate.

REFERENCES:
patent: 5040043 (1991-08-01), Ohno et al.
patent: 5363793 (1994-11-01), Sato

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