Method for manufacturing semiconductor device having groove-stru

Details Method for manufacturing semiconductor device having groove-stru Method for manufacturing semiconductor device having groove-stru

1993-11-26

1994-08-23

Thomas, Tom

Fishing, trapping, and vermin destroying

437 52, 437 63, 148DIG50, H01L 2176

Patent

active

053407695

ABSTRACT:
A conductive layer is formed on a semiconductor substrate, and is etched so that a side face of the conductive layer is reversely-tapered. Also, a sidewall insulating layer is formed on the side face of the conductive layer. Then, a groove is formed within the semiconductor substrate with a mask of the sidewall insulating layer, and an isolation insulating layer is buried within the groove.

REFERENCES:
patent: 4981812 (1991-01-01), Nishizaka
patent: 5208179 (1993-05-01), Okazawa
T. Nishizaka et al: "32 Mbit Very High Density Mask ROM", NEC Res. & Develop., vol. 32, No. 1, Jan. 1991, pp. 48-51.

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