Method for manufacturing semiconductor device having a non-volat

Details Method for manufacturing semiconductor device having a non-volat Method for manufacturing semiconductor device having a non-volat

1990-12-03

1992-03-10

Hearn, Brian E.

Fishing, trapping, and vermin destroying

437 49, 437 52, 148DIG138, H01L 21265

Patent

active

050949675

ABSTRACT:
A method for manufacturing a semiconductor substrate device having a non-volatile memory cell region and a logic region including MOS transistors. A first insulating film and a first electrode layer are formed on a semiconductor substrate. Only those portions of the first insulating film and first electrode layer which are located in the logic region are removed, without removing those portions of the first insulating film and first electrode layer which are located in the non-volatile memory cell region. A sacrificial film is deposited for insulation over the entire surface of the memory cell region and logic region, and then a resist film is coated on the sacrificial film. Subsequently, impurity ions are implanted into a desired channel region located in the logic region. The resist film and sacrificial film are removed, and thereafter a second insulating film and a second electrode layer are formed.

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Shinada et al., J. Electrochemical society, vol. 132, No. 9, p. 2185 (1985), "Reduction in Polysilicon Oxide Leakage Current by Annealing Prior to Oxidation".

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