Fishing – trapping – and vermin destroying
Patent
1991-10-02
1993-08-24
Maples, John S.
Fishing, trapping, and vermin destroying
437200, H01L 21441
Patent
active
052388735
ABSTRACT:
A method for manufacturing a semiconductor device, comprising the steps of forming an oxide film selectively on the surface of a semiconductor substrate; forming a first polycrystalline silicon film on the whole surface and then forming a metallic silicide film on the surface of the first polycrystalline silicon film; patterning the first polycrystalline silicon film and the metallic silicide film except for the desired areas by a lithographic method; depositing polycrystalline silicon on the whole surface to thereby form a second polycrystalline silicon film and allow it to cover the patterned first polycrystalline silicon film and metallic silicide film; and performing oxidation in a state in which a boundary portion between the first polycrystalline silicon film and the metallic silicide film is not exposed to an oxidizing atmosphere by the presence of the second polycrystalline silicon film, to form an oxide film on the surface.
REFERENCES:
patent: 4816425 (1989-03-01), McPherson
patent: 4935380 (1990-06-01), Okumura
patent: 4978637 (1990-12-01), Liou et al.
patent: 5059554 (1991-10-01), Spinner et al.
Higashizono Masayoshi
Kodaira Yasunobu
Shino Katsuya
Kabushiki Kaisha Toshiba
Maples John S.
LandOfFree
Method for manufacturing semiconductor device having a metallic does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device having a metallic , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device having a metallic will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-828793