Method for manufacturing semiconductor device having a...

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Reexamination Certificate

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Details

C438S239000, C438S250000, C438S253000, C438S254000, C438S397000, C257SE21011

Reexamination Certificate

active

07816222

ABSTRACT:
A semiconductor device and a method for manufacturing the same are provided. The semiconductor device includes cylinder type bottom electrodes connected to a contact plug formed over a semiconductor substrate, and a supporting pattern formed between the cylinder type bottom electrodes, wherein a portion of sidewalls of the bottom electrodes is higher than the supporting pattern and the other portion of the sidewalls of the bottom electrode is lower than the supporting pattern.

REFERENCES:
patent: 7153740 (2006-12-01), Kim et al.
patent: 2003/0124796 (2003-07-01), Jeon et al.
patent: 2005/0153518 (2005-07-01), You et al.
patent: 2007/0093022 (2007-04-01), Basceri et al.
patent: 100549951 (2006-02-01), None
patent: 102007000077 (2007-01-01), None
patent: 102007004492 (2007-05-01), None
patent: 100844983 (2008-07-01), None
Notice of Preliminary Rejection issued from Chinese State Intellectual Property Office on Jun. 30, 2010.

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