Fishing – trapping – and vermin destroying
Patent
1995-09-25
1996-10-22
Quach, T. N.
Fishing, trapping, and vermin destroying
437192, 437195, 437201, 437239, H01L 21283
Patent
active
055676529
ABSTRACT:
A method for manufacturing a semiconductor device which comprises a silicon single crystal substrate and a cobalt silicide film formed on the silicon single crystal substrate and equipped with a matched crystalline orientation reflecting the crystallinity of the silicon substrate. The present invention also discloses a method for manufacturing a desired semiconductor device comprising a substantially epitaxial and less uneven cobalt silicide film which comprises forming a Si oxide film on the surface of a Si substrate, further forming Ti and Co films, followed by heat treatment. This method provides a convenient process along with a cobalt silicide film which is less uneven in its surface and is excellent in crystal orientation can be selectively formed, and an effect that a contact can be formed which is less uneven and has a low contact resistance.
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Ghandhi, S. K., VLSI Fabrication Principles, John Wiley & Sons, 1983, PP. 371-375.
NEC Corporation
Quach T. N.
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