Method for manufacturing semiconductor device by controlling thi

Details Method for manufacturing semiconductor device by controlling thi Method for manufacturing semiconductor device by controlling thi

1983-05-17

1985-02-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Assembling or joining

29571, 29578, 156643, 357 49, H01L 2176

Patent

active

044971087

ABSTRACT:
A method of manufacturing a semiconductor device wherein a thickness of an insulating film at a peripheral portion of an element formation region of a semiconductor substrate is increased. The feature of this method is that an antioxidant film is formed on the element formation region and subsequently said semiconductor substrate is exposed to an oxygen atmosphere, thereby locally oxidizing that portion of the film which surrounds said element formation region.

REFERENCES:
patent: 4419813 (1983-12-01), Iwai
Preprints for 29-th Applied Physics Meeting 691 (1982) Ogawa et al.
K. Kurosawa, T. Shibata and H. Iizuka, "A New Bird's-Beak Free Field Isolation Technology for VLSI Devices" IEDM Techn. Digest, 384-387 (1981).

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