Active solid-state devices (e.g. – transistors – solid-state diode – Combined with electrical contact or lead – Of specified material other than unalloyed aluminum
Reexamination Certificate
2011-08-30
2011-08-30
Wilczewski, Mary (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Combined with electrical contact or lead
Of specified material other than unalloyed aluminum
C257S774000, C257SE23167, C257SE23154, C257SE23151, C438S637000
Reexamination Certificate
active
08008777
ABSTRACT:
An etching stopper film is formed on top of a first insulating film. The etching stopper film is a film formed by depositing at least two films, made of constituent materials identical in quality to each other, one another. Subsequently, a first opening pattern is formed in the etching stopper film. Subsequently, a second insulating film is formed on top of the etching stopper film. Subsequently, a mask pattern is formed on top of the second insulating film. Subsequently, the second insulating film is etched with the use of the mask pattern as a mask to be followed by etching of the first insulating film with the use of the etching stopper film as a mask.
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McGinn IP Law Group PLLC
Renesas Electronics Corporation
Wilczewski Mary
LandOfFree
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