Method for manufacturing semiconductor device and semiconductor

Semiconductor device manufacturing: process – Making passive device – Stacked capacitor

Patent

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

438397, 438210, 438239, 438542, 438255, 117103, 117 97, 117 98, 117105, H01L 2120

Patent

active

061436194

ABSTRACT:
A method of manufacturing a semiconductor device contains a first treatment step of removing a silicon oxide film on a semiconductor substrate (15) in a rare hydrofluoric acid treatment device (12), a second treatment step of forming hemispherical grained silicon on the semiconductor substrate (15) in an HSG-Si forming device (13), and a step of moving the semiconductor substrate (15) treated in the first treatment step to the HSG-Si forming device (13) by means of a semiconductor substrate moving device (14), wherein filtering an air in the semiconductor substrate moving device (14) is conducted so that an amount of organic materials which adhere onto a surface of the semiconductor substrate (15) during a process to the second treatment step is set to 1 ng/cm.sup.2 or less.

REFERENCES:
patent: 4877757 (1989-10-01), York et al.
patent: 4890780 (1990-01-01), Mimata et al.
patent: 5429642 (1995-07-01), Ohkuma
patent: 5518542 (1996-05-01), Matsukawa et al.
patent: 5634974 (1997-06-01), Weimer et al.
patent: 5798455 (1998-08-01), Sakata et al.
British Search Report dated Oct. 21, 1998.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing semiconductor device and semiconductor does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device and semiconductor , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and semiconductor will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-1640079

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.