Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2005-08-23
2005-08-23
Norton, Nadine G. (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C438S691000, C438S692000, C438S719000, C451S041000, C451S043000, C451S044000, C451S398000, C134S001300, C134S902000
Reexamination Certificate
active
06933234
ABSTRACT:
In manufacturing a semiconductor device, a part of an element is formed on the surface of a substrate, and at least a periphery of the substrate is polished using a polishing member stretched around the periphery of the substrate so that a polishing face of the polishing member is slid on a polishing target surface of the periphery.
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Notification for Filing Opinion (and translation), Korean Patent Office, Nov. 19, 2004.
Hiroyuki Yano et al., “Manufacturing Method of Semiconductor Device”, U.S. Appl. No. 09/870,085, filed May 30, 2001.
Norio Kimura et al., “Polishing Appartus and Method”, U.S. Appl. No. 09/824,644, filed Apr. 4, 2001.
Miyashita Naoto
Nakamura Kenro
Okumura Katsuya
Yoda Takashi
Chen Eric B.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Kabushiki Kaisha Toshiba
Norton Nadine G.
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