Semiconductor device manufacturing: process – Chemical etching – Combined with the removal of material by nonchemical means
Reexamination Certificate
2008-01-03
2010-11-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Chemical etching
Combined with the removal of material by nonchemical means
C451S028000, C216S089000, C257SE21230
Reexamination Certificate
active
07842614
ABSTRACT:
A method for manufacturing a semiconductor device, including depositing an interconnect material including Cu or Cu alloy over an insulating film, and polishing the interconnect material by CMP with a polishing liquid, wherein the oxidation-reduction potential (ORP) of the polishing liquid is controlled so as to be in the range of 400 mV to 700 mV vs. Ag/AgCl.
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Kanki Tsuyoshi
Kimura Takahiro
Shirasu Tetsuya
Coleman W. David
Fujitsu Limited
Fujitsu Patent Center
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