Method for manufacturing semiconductor device and computer...

Details Method for manufacturing semiconductor device and computer... Method for manufacturing semiconductor device and computer...

2006-06-12

2009-12-08

Thai, Luan C (Department: 2891)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S681000, C438S239000, C438S254000, C257S295000, C257SE21664, C257SE21663, C257SE21648

Reexamination Certificate

active

07629183

ABSTRACT:
A method for fabricating a semiconductor device includes the steps of forming a PbTiOx film having a predominantly (111) orientation on a lower electrode as a nucleation layer by an MOCVD process with a film thickness exceeding 2 nm, and forming a PZT film having a predominantly (111) orientation on the nucleation layer, wherein the step of forming the PbTiOx film is conducted under an oxygen partial pressure of less than 340 Pa.

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