Method for manufacturing semiconductor device and capacitor

Details Method for manufacturing semiconductor device and capacitor Method for manufacturing semiconductor device and capacitor

2005-06-07

2005-06-07

Wilczewski, M. (Department: 2822)

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

C438S653000, C438S654000, C438S685000, C438S686000

Reexamination Certificate

active

06902983

ABSTRACT:
A semiconductor devices includes: a diffusion barrier layer composed of ternary compound elements formed on a substrate, wherein the diffusion barrier contains ruthenium, titanium and oxygen; and a capacitor formed on the diffusion barrier layer, wherein the capacitor includes a bottom electrode formed on the diffusion barrier layer, a dielectric layer formed on the bottom electrode and a top electrode formed on the dielectric layer.

REFERENCES:
patent: 6011284 (2000-01-01), Katori et al.
patent: 6015989 (2000-01-01), Horikawa et al.
patent: 6133159 (2000-10-01), Vaartstra et al.
patent: 6207232 (2001-03-01), Kadokura
patent: 2002/0001971 (2002-01-01), Cho
patent: 10-022469 (1998-01-01), None
patent: 10-242409 (1998-09-01), None

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