Method for manufacturing semiconductor device and apparatus...

Details Method for manufacturing semiconductor device and apparatus... Method for manufacturing semiconductor device and apparatus...

2005-06-21

2005-06-21

Le, Thao P. (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

C438S672000, C438S697000, C438S691000, C438S692000

Reexamination Certificate

active

06908860

ABSTRACT:
The object of the invention is to provide a method of manufacturing a semiconductor device and a processing apparatus for planarization wherein to form copper wiring in multiple layers. The removal of a residue of polishing by local electro polishing, the enhancement of the performance of planarization by using a grindstone and the reduction by small frictional force in electro polishing of damage, are enabled. To achieve the object, the following measures are taken. A residue of polishing of copper is removed by combining the detection of a local area including the residue of polishing of copper and local processing for electro polishing. As small-load processing for planarization is enabled by using electro polishing, multilayer interconnection structure using low-k material as a dielectric interlayer is also enabled. Plural pairs of small unit electrodes in a pair of which minus electrodes surround a plus electrode are provided to a tool for electro polishing, each electrode is connected to a power supply, pulse voltage is applied to each electrode and copper is electrolytically polished.

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Koinkar, Vilas, et al. “Chemical Mechanical Planarization of Copper Interconnects Using Fixed Abrasive Polishing Pad,” CMP-MIC Conference, Mar. 2-3, 2000, pp. 58-65, USA.

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