Method for manufacturing semiconductor device, and...

Details Method for manufacturing semiconductor device, and... Method for manufacturing semiconductor device, and...

2007-05-29

2007-05-29

Geyer, Scott B. (Department: 2812)

Semiconductor device manufacturing: process

Having magnetic or ferroelectric component

C438S381000, C257SE21009

Reexamination Certificate

active

11155031

ABSTRACT:
A first hydrogen barrier film and an intermediate layer are formed on an interlayer dielectric film. A ferroelectric capacitor is formed on the intermediate layer, and a second hydrogen barrier film is formed over the entire surface including on the upper surface and side surfaces of the ferroelectric capacitor and on the intermediate layer. Then, the second hydrogen barrier film and the intermediate layer are removed while leaving at least portions on the upper surface and side surfaces of the ferroelectric capacitor. Then, a third hydrogen barrier film is formed on the second hydrogen barrier film, on side surfaces of the second hydrogen barrier film and the intermediate layer, and on the first hydrogen barrier film.

REFERENCES:
patent: 2002-176149 (2002-06-01), None
patent: 2002-299576 (2002-10-01), None
patent: 2003-051582 (2003-02-01), None

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