Method for manufacturing semiconductor device, and...

Details Method for manufacturing semiconductor device, and... Method for manufacturing semiconductor device, and...

2006-05-30

2006-05-30

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Combined with the removal of material by nonchemical means

C438S691000, C134S001200, C134S001300

Reexamination Certificate

active

07052994

ABSTRACT:
A method for manufacturing a semiconductor device comprises: forming an N region and P region on a substrate, forming wiring so as to connect one or both of these N and P regions; and performing a processing step on a semiconductor substrate on which the upper surface of said wiring is exposed using a liquid, wherein said processing step is performed in a state in which the wavelength of light radiated onto said semiconductor substrate is 500 nm to less than 1 μm, so that problems such as wiring connection defects for which there is the risk of occurring in the cleaning step are prevented by performing the cleaning step during, before or after a step that includes chemical mechanical polishing (CMP) for forming the above wiring.

REFERENCES:
patent: 5952694 (1999-09-01), Miyawaki et al.
patent: 6169652 (2001-01-01), Klebanoff
patent: 6296714 (2001-10-01), Matsuo et al.
patent: 6376345 (2002-04-01), Ohashi et al.
patent: 06-061217 (1994-03-01), None
patent: 07-221062 (1995-08-01), None
patent: 11-251317 (1999-09-01), None

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