Method for manufacturing semiconductor device and...

Details Method for manufacturing semiconductor device and... Method for manufacturing semiconductor device and...

2008-07-22

2008-07-22

Lindsay, Jr., Walter L (Department: 2812)

Semiconductor device manufacturing: process

Chemical etching

Liquid phase etching

C438S287000, C438S742000, C257SE21483, C257SE21485

Reexamination Certificate

active

11447962

ABSTRACT:
A first oxide film and a second oxide film16are formed in a first region13aand a second region13b, respectively, on the surface of the semiconductor substrate10, via thermal oxidization method, and the first oxide film is removed while the second oxide film16is covered with the resist layer18formed thereon, and then the resist layer18is removed with a chemical solution containing an organic solvent such as isopropyl alcohol as a main component. Subsequently, a third oxide film22having different thickness than the second oxide film16is formed in the first region13a.

REFERENCES:
patent: 6300202 (2001-10-01), Hobbs et al.
patent: 6835667 (2004-12-01), Christenson et al.
patent: 6855639 (2005-02-01), Brask et al.
patent: 3-49244 (1991-03-01), None
patent: 3-185852 (1991-08-01), None
patent: 2000-003965 (2000-01-01), None
patent: 2000-243856 (2000-09-01), None
patent: 2001-44429 (2001-02-01), None
patent: 2001-274378 (2001-10-01), None
patent: 2002-075950 (2002-03-01), None
patent: 2002-164316 (2002-06-01), None
patent: 2002-192090 (2002-07-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3923755