Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching

Reexamination Certificate

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C216S094000

Reexamination Certificate

active

07867907

ABSTRACT:
The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.

REFERENCES:
patent: 4842677 (1989-06-01), Wojnarowski et al.
patent: 4861964 (1989-08-01), Sinohara
patent: 4865686 (1989-09-01), Sinohara
patent: RE33947 (1992-06-01), Shinohara
patent: 5708252 (1998-01-01), Shinohara et al.
patent: 6149988 (2000-11-01), Shinohara et al.
patent: 6261856 (2001-07-01), Shinohara et al.
patent: 63-84789 (1988-04-01), None
patent: 9-152618 (1997-06-01), None
patent: 11099582 (1999-04-01), None
patent: WO 0028604 (2000-05-01), None
Office Action re Chinese application No. CN 200710185774.6, dated Mar. 1, 2010 (with English translation).

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