Semiconductor device manufacturing: process – Chemical etching
Reexamination Certificate
2011-01-11
2011-01-11
Culbert, Roberts (Department: 1716)
Semiconductor device manufacturing: process
Chemical etching
C216S094000
Reexamination Certificate
active
07867907
ABSTRACT:
The present invention provides a method by which a thin film process can be conducted simply and accurately without using resist. Further, the present invention provides a method of manufacturing semiconductor devices at low cost. A first layer is formed over a substrate, a peeling layer is formed over the first layer, the peeling layer is selectively irradiated with a laser beam from the peeling layer side to reduce adhesiveness of a part of the peeling layer. Next, the peeling layer in the part with reduced adhesiveness is removed, and the left portion of the peeling layer is used as a mask to selectively etch the first layer.
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Jinbo Yasuhiro
Miyairi Hidekazu
Shimomura Akihisa
Culbert Roberts
Husch Blackwell LLP Welsh & Katz
Semiconductor Energy Laboratory Co,. Ltd.
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