Semiconductor device manufacturing: process – Having metal oxide or copper sulfide compound semiconductor...
Reexamination Certificate
2011-03-29
2011-03-29
Ghyka, Alexander G (Department: 2812)
Semiconductor device manufacturing: process
Having metal oxide or copper sulfide compound semiconductor...
C438S158000, C257SE21414
Reexamination Certificate
active
07915075
ABSTRACT:
An object is to establish a processing technique in manufacture of a semiconductor device in which an oxide semiconductor is used. A gate electrode is formed over a substrate, a gate insulating layer is formed over the gate electrode, an oxide semiconductor layer is formed over the gate insulating layer, the oxide semiconductor layer is processed by wet etching to form an island-shaped oxide semiconductor layer, a conductive layer is formed to cover the island-shaped oxide semiconductor layer, the conductive layer is processed by dry etching to form a source electrode, and a drain electrode and part of the island-shaped oxide semiconductor layer is removed by dry etching to form a recessed portion in the island-shaped oxide semiconductor layer.
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Muraoka Taiga
Sasagawa Shinya
Suzawa Hideomi
Ghyka Alexander G
Mustapha Abdulfattah
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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