Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-07-05

2011-07-05

Dang, Trung (Department: 2892)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C257SE21568

Reexamination Certificate

active

07972935

ABSTRACT:
When single crystal semiconductor layers are transposed from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers, which are being divided in size of manufactured semiconductor elements, are transposed to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate. Further, etching is performed on the single crystal semiconductor layers formed over the base substrate, and the shapes of the SOI layers are controlled precisely by being processed and modified.

REFERENCES:
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6380019 (2002-04-01), Yu et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 7199024 (2007-04-01), Yamazaki
patent: 7288458 (2007-10-01), Adetutu et al.
patent: 7811884 (2010-10-01), Yamazaki et al.
patent: 2002/0109144 (2002-08-01), Yamazaki
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0228452 (2007-10-01), Asami
patent: 2008/0242050 (2008-10-01), Yamazaki et al.
patent: 11-045862 (1999-02-01), None
patent: 2000-012864 (2000-01-01), None

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