Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2011-08-30

2011-08-30

Carrillo, Sharidan (Department: 1711)

Cleaning and liquid contact with solids

Processes

For metallic, siliceous, or calcareous basework, including...

C134S002000, C134S025400, C134S026000, C134S027000, C134S028000, C134S029000, C134S030000, C134S034000, C134S035000, C134S036000, C134S041000, C134S042000, C134S902000, C510S175000, C510S375000, C216S083000, C216S092000, C216S100000, C216S101000, C216S105000, C216S106000, C216S107000, C216S108000, C216S109000, C438S745000, C438S748000, C438S906000

Reexamination Certificate

active

08007594

ABSTRACT:
A method for manufacturing a semiconductor device includes the step of conducting a cleaning process for a wafer formed with copper wiring lines to remove contaminations produced on a back surface of the wafer. The cleaning process is conducted by injecting onto the back surface of the wafer an etchant for removing contaminations and simultaneously injecting onto a front surface of the wafer a reductant containing hydrogen.

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patent: 6764552 (2004-07-01), Joyce et al.
patent: 2003/0084918 (2003-05-01), Kim
patent: 2004/0094187 (2004-05-01), Lee
patent: 2007/0161243 (2007-07-01), Mellies
patent: 100884980 (2009-02-01), None

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