Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1997-07-03

1999-08-24

Bowers, Charles

Semiconductor device manufacturing: process

Making passive device

Stacked capacitor

438399, 438240, 438239, H01L 2120

Patent

active

059435836

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device, including a step of forming an opening 1 such as a contact hole and a succeeding heat treatment step such as contact annealing, wherein the heat treatment is performed upon completion of filling the opening with a diffusion-preventing film 9 or the like. The method according to the present invention is free from disadvantages due to diffusion of a diffusible material during a heat treatment step performed after the step of forming an opening even if the method is applied to manufacture of a semiconductor device having a structure in which a diffusible material 2 such as a dielectric material used in a capacitor may diffuse through the opening due to heat during such a heat treatment step.

REFERENCES:
patent: 5122477 (1992-06-01), Wolters et al.
patent: 5498569 (1996-03-01), Eastep
S. Wolf and R.N. Tabuber, Diffusion in Silicon Dioxide, Silicon Processing for the VLSI Era vol. I Process Technology, p. 262, 1986.

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