Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2011-04-19
2011-04-19
Huynh, Andy (Department: 2829)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C438S689000, C257S635000
Reexamination Certificate
active
07927971
ABSTRACT:
A release layer formed over a substrate; at least one of thin film integrated circuits is formed over the release layer; a film is formed over each of the at least one of thin film integrated circuits; and the release layer is removed by using an etchant; thus, the at least one of thin film integrated circuits is peeled from the substrate. A semiconductor device is formed by sealing the peeled thin film integrated circuit by lamination or the like.
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Dairiki Koji
Dozen Yoshitaka
Sugiyama Eiji
Tamura Tomoko
Tsurume Takuya
Brown Valerie
Huynh Andy
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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