Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1983-06-08

1985-03-05

Hearn, Brian E.

Metal working

Method of mechanical manufacture

Electrical device making

29571, 29582, 148 15, 148187, 357 65, 357 68, 357 85, H01L 2348, H01L 2350

Patent

active

045022100

ABSTRACT:
A semiconductor device is manufactured by selectively removing an insulating film which covers at least one conductive layer to form at least one contact hole partially exposing the conductive layer. Then, a layer of an inorganic conductive material having a melting point lower than the material comprising the conductive layer is formed on a surface of the insulating film and is melted to fill the contact hole with the inorganic conductive material. Finally a wiring layer is formed in contact with the inorganic conductive material filled in the contact hole.

REFERENCES:
patent: 3889359 (1975-06-01), Rand
patent: 4045594 (1977-08-01), Maddocks
patent: 4258078 (1981-03-01), Celler et al.
patent: 4327477 (1982-05-01), Yaron et al.
patent: 4362597 (1982-12-01), Fraser et al.

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