Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1982-09-30

1984-10-23

Rutledge, L. Dewayne

Metal treatment

Process of modifying or maintaining internal physical...

Chemical-heat removing or burning of metal

29576W, 29578, 156648, H01L 2120

Patent

active

044786557

ABSTRACT:
The invention provides a method for manufacturing a semiconductor device, having the steps of: forming a first mask pattern on a semiconductor layer through an SiO.sub.2 film; forming a thin layer on at least side surfaces of the first mask pattern; selectively forming a second mask pattern on an SiO.sub.2 film portion located between the thin layer portions formed on the side surface of the first mask pattern; selectively etching the thin layer portions formed on the at least side surfaces of the first mask pattern, and the SiO.sub.2 film portions under the thin layer portions formed on the side surfaces of the first mask pattern, using the first and second mask patterns; selectively etching an exposed portion of the semiconductor layer to form a trench; and forming an element isolation region by burying an insulating material in the trench.

REFERENCES:
patent: 3859127 (1975-01-01), Lehner
patent: 4234362 (1980-11-01), Riseman
patent: 4272308 (1981-06-01), Varshney
patent: 4274909 (1981-06-01), Venkataraman et al.
patent: 4390393 (1983-06-01), Ghezzo et al.

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