Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1992-07-28

1993-12-28

Hearn, Brian A.

Fishing, trapping, and vermin destroying

437 26, 437 74, 437 76, 437154, H01L 21265

Patent

active

052739120

ABSTRACT:
A method for manufacturing a semiconductor device including forming an epitaxial layer on a second conductive silicon substrate selectively provided with a first conductive impurity diffusion layer and diffusing a second impurity through surface of the epitaxial layer to form islands of the epitaxial layer, the above epitaxial layer having a higher specific resistance than that of the silicon substrate.

REFERENCES:
patent: 4637125 (1987-01-01), Iwasaki et al.
patent: 4965220 (1990-10-01), Iwasaki

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