Harvesters – Cutting – conveying and binding – High outside binder
Patent
1987-05-28
1988-05-03
Powell, William A.
Harvesters
Cutting, conveying and binding
High outside binder
156653, 156656, 156657, 1566591, 156662, 437 52, 437 61, 437228, 437233, 437235, H01L 21306, B44C 122, C03C 1500, C23F 102
Patent
active
047418028
ABSTRACT:
A method for manufacturing a semiconductor device comprises the steps of forming a trench (2) on the major surface of a semiconductor substrate (1) and depositing a polysilicon film (5) on the entire surface of the semiconductor substrate (1) including the inside of said trench (2). In order to form complete isolation in the bottom portion of the trench (2), the trench (2) is filled with an oxide film (10). A refractory metal (12) such as tungsten which can be selectively deposited on polysilicon is deposited only on the polysilicon film (5) on the major surface of the semiconductor substrate (1). The oxide (10) inside the trench (2) removed and then, anisotropic etching of the polysilicon film (5) in the bottom portion of the trench (2) is performed utilizing the refractory metal (12) as a mask, so that isolation is formed in a self-aligning manner. thereafter, an oxide film (13) and a polysilicon film (14) are formed successively, so that three-dimensional charge storage capacitance is achieved.
REFERENCES:
patent: 4477310 (1984-10-01), Park et al.
patent: 4645564 (1987-02-01), Morie et al.
Nakajima, S. et al, "An Isolation-Merged Vertical Capacitor Cell for Large Capacity Dram", International Electron Device Meeting, 1984, (IEDM 84), pp. 240-243.
Mitsubishi Denki & Kabushiki Kaisha
Powell William A.
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