Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1994-10-11

1996-04-09

Fourson, George

Fishing, trapping, and vermin destroying

437228, 1566361, H01L 2176

Patent

active

055061680

ABSTRACT:
A method for manufacturing a semiconductor device of the present invention has the step of forming an insulation material on a main surface of a semiconductor substrate. A groove is formed to extend from the surface of the material film to the substrate. The groove is buried with a first insulation film. By use of the first insulation film as an etching mask, the material film is removed, so that a projecting portion projecting to the first insulation film from the main surface can be obtained. A second insulation film is formed on a side surface or the projecting portion in a slope shape, which is from the top portion of the projecting portion to the main surface.

REFERENCES:
patent: 4160991 (1979-07-01), Anantha et al.

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