Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-12-04

2011-12-06

Lebentritt, Michael (Department: 2829)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Grooved and refilled with deposited dielectric material

C438S717000, C438S735000, C438S736000

Reexamination Certificate

active

08071460

ABSTRACT:
In a method of manufacturing a semiconductor device, a first film is formed directly on a semiconductor substrate and a second film is formed on the first film. A region of the second film is then etched to form an opening that exposes the first film. The first film is then arbitrarily patterned by etching to expose a surface of the semiconductor substrate. Thereafter, the second film and the exposed surface of the semiconductor substrate are simultaneously etched using the patterned first film as a mask and in an etching ambient having a low etching rate for the first film and having a high etching rate for the second film and the semiconductor substrate until the second film is almost completely etched and a detection amount of a monitored element of the first film increases.

REFERENCES:
patent: 5413966 (1995-05-01), Schoenborn
patent: 6140206 (2000-10-01), Li et al.
patent: 6919259 (2005-07-01), Chang et al.
patent: 7199058 (2007-04-01), Maruyama et al.
patent: 7514277 (2009-04-01), Saito et al.
patent: 2002/0025636 (2002-02-01), Ju
patent: 2003/0003756 (2003-01-01), Yu
patent: 2004/0175950 (2004-09-01), Puppo et al.
patent: 2005/0042837 (2005-02-01), Hong et al.
patent: 2006/0024945 (2006-02-01), Kim et al.
patent: 2008/0032508 (2008-02-01), Chang
Patent Abstracts of Japan, publication No. 2001-185532, publication date Jul. 6, 2001.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4299152