Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2008-08-25
2010-11-23
Dang, Phuc T (Department: 2892)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S404000, C438S685000, C257SE51024, C257S021000
Reexamination Certificate
active
07838328
ABSTRACT:
A method for manufacturing a semiconductor device having flexibility by separating an element that is manufactured by a comparatively low-temperature (temperature of less than 500° C.) process from a substrate is provided. The element is separated from a glass substrate by the following steps: forming a silicone layer over a glass substrate; performing plasma treatment to the surface of the silicone layer to weaken the surface of the silicone layer; stacking an organic compound layer over the silicone layer; and forming an element that is manufactured through a process at a comparatively low-temperature, typically, a temperature that the organic compound can withstand, over the compound layer.
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Costellia Jeffrey L.
Dang Phuc T
Nixon & Peabody LLP
Semiconductor Energy Laboratory Co,. Ltd.
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