Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

1991-06-13

1992-05-05

Chaudhuri, Olik

Fishing, trapping, and vermin destroying

437 31, 437 63, 148DIG10, H01L 21265, H01L 2970

Patent

active

051107490

ABSTRACT:
A p-type buried layer is formed on the surface of an n-type semiconductor substrate directly or on the surface of an n-type semiconductor region with relatively low impurity concentration which is formed on the surface of the semiconductor substrate. In the case of forming the buried layer directly on the surface of the semiconductor substrate, second conductivity type impurities are injected into the interface of the buried layer and the semiconductor substrate and are diffused, thereby the buried layer being isolated from the semiconductor substrate. Therefore, the impurity concentration and thickness of the buried layer can be sufficiently increased in simple processes.

REFERENCES:
patent: 4910160 (1990-03-01), Jennings et al.
patent: 4937099 (1990-07-01), Seacrist et al.
patent: 4940671 (1990-07-01), Small et al.

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