Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-12-19

2010-11-30

Coleman, W. David (Department: 2823)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

Subsequent separation into plural bodies

C257SE21088

Reexamination Certificate

active

07842584

ABSTRACT:
There are provided a semiconductor device having a structure which can realize not only suppression of a punch-through current but also reuse of a silicon wafer used for bonding, in manufacturing a semiconductor device using an SOI technique, and a manufacturing method thereof. A semiconductor film into which an impurity imparting a conductivity type opposite to that of a source region and a drain region is implanted is formed over a substrate, and a single crystal semiconductor film is bonded to the semiconductor film by an SOI technique to form a stacked semiconductor film. A channel formation region is formed using the stacked semiconductor film, thereby suppressing a punch-through current in a semiconductor device.

REFERENCES:
patent: 5374564 (1994-12-01), Bruel
patent: 5714395 (1998-02-01), Bruel
patent: 5894151 (1999-04-01), Yamazaki et al.
patent: 6127702 (2000-10-01), Yamazaki et al.
patent: 6251754 (2001-06-01), Ohshima et al.
patent: 6271101 (2001-08-01), Fukunaga
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6388652 (2002-05-01), Yamazaki et al.
patent: 6602761 (2003-08-01), Fukunaga
patent: 6686623 (2004-02-01), Yamazaki
patent: 6709907 (2004-03-01), Yamazaki et al.
patent: 6778164 (2004-08-01), Yamazaki et al.
patent: 6803264 (2004-10-01), Yamazaki et al.
patent: 6875633 (2005-04-01), Fukunaga
patent: 6908797 (2005-06-01), Takano
patent: 7148542 (2006-12-01), Yamazaki et al.
patent: 7176525 (2007-02-01), Fukunaga
patent: 7199024 (2007-04-01), Yamazaki
patent: 7256776 (2007-08-01), Yamazaki et al.
patent: 7339235 (2008-03-01), Yamazaki et al.
patent: 2004/0104424 (2004-06-01), Yamazaki
patent: 2005/0009252 (2005-01-01), Yamazaki et al.
patent: 2005/0260800 (2005-11-01), Takano
patent: 2006/0272574 (2006-12-01), Waite et al.
patent: 2006/0292778 (2006-12-01), Sekiguchi
patent: 2007/0087488 (2007-04-01), Moriwaka
patent: 2007/0096210 (2007-05-01), Yamazaki et al.
patent: 2007/0108510 (2007-05-01), Fukunaga
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2007/0184632 (2007-08-01), Yamazaki et al.
patent: 2007/0281399 (2007-12-01), Cites et al.
patent: 2007/0291022 (2007-12-01), Yamazaki et al.
patent: 2009/0020815 (2009-01-01), Godo
patent: 05-326962 (1993-12-01), None
patent: 07-142738 (1995-06-01), None

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