Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2008-02-20

2010-12-21

Luu, Chuong A (Department: 2813)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S164000, C257SE21086

Reexamination Certificate

active

07855096

ABSTRACT:
A semiconductor film is formed on a GaAs substrate (semiconductor substrate). An SiO2film (insulating film) is formed on the semiconductor film, and the SiO2film is patterned. The semiconductor film is etched using the SiO2film as a mask to form a mesa structure. The surface of the SiO2film is treated by ashing, using SF6gas (fluorine-containing gas), to terminate the surface of the SiO2film with fluorine. The mesa structure is selectively buried with a III-V compound semiconductor film, using the SiO2film having the surface that has been terminated by fluorine, as a mask.

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