Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-02-10

2010-12-14

Huynh, Andy (Department: 2818)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S551000, C438S671000, C438S700000, C438S717000, C438S942000, C430S005000

Reexamination Certificate

active

07851371

ABSTRACT:
A method for manufacturing a semiconductor device of the present invention includes: forming a first film, a second film and a third film in sequence on a silicon substrate; patterning a resist film formed on the third film by conducting an exposure and developing process for the resist film employing an exposure mask including a phase shifter; selectively dry-etching the third film through a mask of the resist film employing the second film as an etch stop to process the third film into a first pattern; further dry-etching the third film employing the second film as an etch stop to partially remove the third film, thereby processing the third film into a second pattern; patterning the second film employing the third film having the second pattern as a mask; and patterning the first film employing the patterned second film as a mask.

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patent: 2005/0019674 (2005-01-01), Okubo et al.
patent: 2000-227652 (2000-08-01), None

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