Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-12-28

2010-10-05

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making device array and selectively interconnecting

C438S129000, C438S532000, C438S599000, C257SE21585, C257SE21658, C257SE21660

Reexamination Certificate

active

07807513

ABSTRACT:
Methods for manufacturing a semiconductor device are provided that reduces the thickness of an oxide layer formed on a polysilicon layer for bit line contacts. A reduced thickness oxide layer can prevent short circuits between adjoining bit lines. A reduced thickness oxide layer can also eliminate the need for overetching in a subsequent etching process, thereby preventing loss of an isolation layer in a peripheral region.

REFERENCES:
patent: 6326657 (2001-12-01), Ohkawa

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