Semiconductor device manufacturing: process – Bonding of plural semiconductor substrates – Subsequent separation into plural bodies
Reexamination Certificate
2008-03-10
2010-12-07
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Bonding of plural semiconductor substrates
Subsequent separation into plural bodies
C257SE21568
Reexamination Certificate
active
07846817
ABSTRACT:
It is an object of the present invention to manufacture a semiconductor element and an integrated circuit that have high performance over a large-sized substrate with high throughput and high productivity. When single crystal semiconductor layers are transferred from a single crystal semiconductor substrate (a bond wafer), the single crystal semiconductor substrate is etched selectively (this step is also referred to as groove processing), and a plurality of single crystal semiconductor layers divided such that they have the size of semiconductor elements to be manufactured are transferred to a different substrate (a base substrate). Thus, a plurality of island-shaped single crystal semiconductor layers (SOI layers) can be formed over the base substrate.
REFERENCES:
patent: 4238278 (1980-12-01), Antipov
patent: 5757456 (1998-05-01), Yamazaki et al.
patent: 5834327 (1998-11-01), Yamazaki et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6191007 (2001-02-01), Matsui et al.
patent: 6380046 (2002-04-01), Yamazaki
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 7176528 (2007-02-01), Couillard et al.
patent: 7199024 (2007-04-01), Yamazaki
patent: 2002/0109144 (2002-08-01), Yamazaki
patent: 2005/0048736 (2005-03-01), Kerdiles et al.
patent: 2007/0173000 (2007-07-01), Yamazaki
patent: 2000-012864 (2000-01-01), None
Breul, M. et al., “Smart-Cut: A New Silicon on Insulator material techniligy based on Hydrogen Implantation and Wafer Bonding.” Jpn. J. Appl. Phys. vol. 36 (1997) pp. 1636-1641. Part 1, No. 3B, Mar. 1997.
Arai Yasuyuki
Kawamata Ikuko
Yamazaki Shunpei
Coleman W. David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
Shook Daniel
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4215345