Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2009-02-05

2010-11-09

Picardat, Kevin M (Department: 2822)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S707000, C438S710000, C438S712000

Reexamination Certificate

active

07829470

ABSTRACT:
A contact hole, after hole etching, is subjected to light etching using a process gas containing a fluorocarbon-based gas and oxygen, with the oxygen being enriched, under condition without applying bias. Then, reaction products (5) having C—F bond and adhered to an interior of a hole (3) are removed using plasma treatment. After that, deposits (4) that have been left at a hole bottom are removed by wet processing. Then, a conductive material is buried in the hole to form a contact plug (7).

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