Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-12-13

2010-02-23

Everhart, Caridad M (Department: 2895)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S752000, C257SE21115, C257SE21219, C257SE21699, C216S099000

Reexamination Certificate

active

07666795

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a SiGe layer on a Si substrate, forming a dummy pattern to expose a surface of the Si substrate, and wet etching the SiGe layer while an etchant is contacted with, the dummy pattern.

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T. Sakai, et al. “Separation by Bonding Si Islands (SBSI) for LSI Applications”, Second International SiGe Technology and Device Meeting, Meeting Abstract, pp. 230-231 (2004).

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