Semiconductor device manufacturing: process – Formation of electrically isolated lateral semiconductive... – Having substrate registration feature
Reexamination Certificate
2008-11-20
2009-12-08
Mulpuri, Savitri (Department: 2812)
Semiconductor device manufacturing: process
Formation of electrically isolated lateral semiconductive...
Having substrate registration feature
C438S196000, C438S221000, C438S975000, C257SE23179, C257SE21546, C257SE21628
Reexamination Certificate
active
07629223
ABSTRACT:
A method for manufacturing a semiconductor device includes forming a plurality of trenches for element isolation and a plurality of trenches for alignment mark on a substrate. The substrate has an active region. The method also includes laminating an oxide film on the substrate and over both of the trenches. The method also includes etching the oxide film using a resist mask that masks the element isolation trenches, so that the oxide film laminated in the active region and the oxide film laminated in the alignment mark trenches are removed. The method also includes polishing a surface of the substrate to planarize or smooth the surface of the substrate. Accordingly, those portions of the oxide film which project from the substrate surface are eliminated and the oxide film remains only inside the element isolation trenches. This divides the active region into a plurality of individual active regions for the respective semiconductor elements. The method also includes positioning the resist mask using the alignment mark trenches. The resist mask is used to fabricate the semiconductor elements in the active regions of the substrate.
REFERENCES:
patent: 6573151 (2003-06-01), Ramsbey et al.
patent: 2005/0282396 (2005-12-01), Lin et al.
patent: 2001-102440 (2001-04-01), None
patent: 2002-050682 (2002-02-01), None
patent: 2002-134701 (2002-05-01), None
Narita Tadashi
Oshima Katsuo
Lee Cheung
Mulpuri Savitri
Oki Semiconductor Co., Ltd.
Rabin & Berdo PC
LandOfFree
Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4149473