Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-07-05

2009-06-02

Vu, David (Department: 2818)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S430000, C438S589000, C438S592000, C257S797000

Reexamination Certificate

active

07541255

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a key open mask for coating a cell region in order to a gate polysilicon layer over an overlay vernier region formed in a gate forming process, and removing the gate polysilicon layer of the overlay vernier region while regulating an etching process so that the overlay vernier region has a superior shape.

REFERENCES:
patent: 5889335 (1999-03-01), Kuroi et al.
patent: 6049137 (2000-04-01), Jang et al.
patent: 6528386 (2003-03-01), Summerfelt et al.
patent: 6534378 (2003-03-01), Ramkumar et al.
patent: 6774452 (2004-08-01), Ramkumar et al.
patent: 6939777 (2005-09-01), Ohto et al.
patent: 2002/0151183 (2002-10-01), Yang et al.
patent: 2006/0197237 (2006-09-01), Machida et al.
patent: 100155835 (1998-07-01), None
patent: 1020010064079 (2001-07-01), None

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