Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2006-07-05

2009-06-23

Coleman, W. David (Department: 2813)

Semiconductor device manufacturing: process

Formation of electrically isolated lateral semiconductive...

Having substrate registration feature

C438S253000, C438S396000, C257SE21019, C257SE21648

Reexamination Certificate

active

07550362

ABSTRACT:
A method for manufacturing a semiconductor device includes forming a sacrificial layer for forming a lower electrode as an amorphous carbon layer in order to prevent collapsing of a cylindrical lower electrode. When an alignment process is not normally performed to arrange photoresist mask pattern for storage electrode and lower electrode contact plug due to optical absorbance of the amorphous carbon layer, a polysilicon layer is further formed over a SiON film used as a hard mask of the amorphous carbon layer, thereby reducing risk of misalignment and performing a stable process for forming a capacitor to increase yield of semiconductor devices.

REFERENCES:
patent: 2005/0214694 (2005-09-01), Hong et al.
patent: 2005/0287738 (2005-12-01), Cho et al.

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4136682