Method for manufacturing semiconductor device

Semiconductor device manufacturing: process – Chemical etching – Liquid phase etching

Reexamination Certificate

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Details

C438S748000, C438S749000, C438S750000, C438S756000

Reexamination Certificate

active

07541293

ABSTRACT:
According to the present invention, a process for changing the form of a processed film is performed to planarize it before the processed film which is formed on a wafer is processed in a manufacturing process of a semiconductor device. As the process for changing the form of the processed film, there may be exemplified a single wafer type wet etching process. The compatibility of the processed film with processing means is taken into consideration and, for instance, the wet etching process is applied to the processed film so as to eliminate parts incompatible with the processing means, so that a distribution in-plane of the processed film is previously improved.

REFERENCES:
patent: 5997653 (1999-12-01), Yamasaka
patent: 6096233 (2000-08-01), Taniyama et al.
patent: 6140233 (2000-10-01), Kwag et al.
patent: 6232228 (2001-05-01), Kwag et al.
patent: 6322626 (2001-11-01), Shirley
patent: 6333275 (2001-12-01), Mayer et al.
patent: 6342434 (2002-01-01), Miyamoto et al.
patent: 6358765 (2002-03-01), Tanaka
patent: 6730579 (2004-05-01), Sasaka
patent: 2001/0054706 (2001-12-01), Levert et al.
patent: 2002/0063169 (2002-05-01), Verhaverbeke et al.
patent: 7-50234 (1995-02-01), None
patent: 9-232279 (1997-09-01), None
patent: 11-111683 (1999-04-01), None
patent: 2000-68371 (2000-03-01), None

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