Semiconductor device manufacturing: process – Forming bipolar transistor by formation or alteration of... – On insulating substrate or layer
Reexamination Certificate
2008-03-28
2009-10-13
Nhu, David (Department: 2895)
Semiconductor device manufacturing: process
Forming bipolar transistor by formation or alteration of...
On insulating substrate or layer
C438S475000, C438S197000, C438S680000, C257SE21170, C257SE21218, C257SE21229, C257SE21227, C257SE21278
Reexamination Certificate
active
07601601
ABSTRACT:
An object is to provide a method for manufacturing, with high yield, a semiconductor device having a crystalline semiconductor layer even if a substrate with low upper temperature limit. A groove is formed in a part of a semiconductor substrate to form a semiconductor substrate that has a projecting portion, and a bonding layer is formed to cover the projecting portion. In addition, before the bonding layer is formed, a portion of the semiconductor substrate to be the projecting portion is irradiated with accelerated ions to form a brittle layer. After the bonding layer and the supporting substrate are bonded together, heat treatment for separation of the semiconductor substrate is performed to provide a semiconductor layer over the supporting substrate. The semiconductor layer is selectively etched, and a semiconductor element is formed and a semiconductor device is manufactured.
REFERENCES:
patent: 5374581 (1994-12-01), Ichikawa et al.
patent: 5670411 (1997-09-01), Yonehara et al.
patent: 6093623 (2000-07-01), Forbes
patent: 6121117 (2000-09-01), Sato et al.
patent: 6335231 (2002-01-01), Yamazaki et al.
patent: 6372609 (2002-04-01), Aga et al.
patent: 6534380 (2003-03-01), Yamauchi et al.
patent: 6818529 (2004-11-01), Bachrach et al.
patent: 7148124 (2006-12-01), Usenko
patent: 2003/0036247 (2003-02-01), Eriksen et al.
patent: 2005/0042798 (2005-02-01), Nagao et al.
patent: 2005/0048736 (2005-03-01), Kerdiles et al.
patent: 2006/0068563 (2006-03-01), Wong et al.
patent: 2007/0281440 (2007-12-01), Cites et al.
patent: 2008/0246109 (2008-10-01), Ohnuma et al.
patent: 1 045 448 (2000-10-01), None
patent: 11-163363 (1999-06-01), None
patent: 2000-124092 (2000-04-01), None
patent: WO 00/24059 (2000-04-01), None
Ohnuma Hideto
Yamazaki Shunpei
Nhu David
Robinson Eric J.
Robinson Intellectual Property Law Office P.C.
Semiconductor Energy Laboratory Co,. Ltd.
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