Method for manufacturing semiconductor device

Details Method for manufacturing semiconductor device Method for manufacturing semiconductor device

2007-11-09

2009-11-24

Cao, Phat X (Department: 2813)

Semiconductor device manufacturing: process

Bonding of plural semiconductor substrates

C438S458000, C438S459000, C257SE21088

Reexamination Certificate

active

07622362

ABSTRACT:
According to the present invention, there is provided a method for manufacturing a semiconductor device that includes preparing a first semiconductor substrate and a second semiconductor substrate, forming a first insulating film on a surface of the first semiconductor substrate, forming circuit elements on a first surface of the second semiconductor substrate, grinding a second surface of the second semiconductor substrate, forming a second insulating film on the second surface of the second semiconductor substrate, and bonding the first insulating film and the second insulating film.

REFERENCES:
patent: 2002/0076902 (2002-06-01), Geusic
patent: 2008/0315349 (2008-12-01), Takei et al.
patent: 5-346592 (1993-12-01), None
patent: 2006-5341 (2006-01-01), None

Affiliated with

Also associated with

Rating

Method for manufacturing semiconductor device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing semiconductor device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing semiconductor device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4081636