Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2006-11-16
2008-12-09
Geyer, Scott B (Department: 2812)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S706000, C257SE21232, C257SE21222
Reexamination Certificate
active
07462566
ABSTRACT:
In the process of forming a predetermined pattern in a process target film, a stacked hard mask film having a first film, a second film and a third film stacked in this order is formed on the process target film (S100), fine line patterns are formed in the third film through a fine-pattern-forming resist film while using the second film as an etching stopper (S102), and the fine-pattern-forming resist film is removed (S104). Subsequently, light exposure is carried out using a resist film (S106to S110), and the second film, the first film and the process target film are then selectively dry-etched in a sequential manner, to thereby form the process target film into a predetermined pattern (S112). The first film remained on the process target film is then removed (S114).
REFERENCES:
patent: 7034379 (2006-04-01), Swanson et al.
patent: 7115993 (2006-10-01), Wetzel et al.
patent: 7169708 (2007-01-01), Inukai
patent: 7259089 (2007-08-01), Kanamura
patent: 7407851 (2008-08-01), Miller et al.
patent: 2002/0173163 (2002-11-01), Gutsche
patent: 2006/0166482 (2006-07-01), Kanamura
patent: 2000-227652 (2000-08-01), None
patent: 2002-175981 (2002-06-01), None
patent: 2003-318128 (2003-11-01), None
patent: 2004-133384 (2004-04-01), None
patent: 2005-045176 (2005-02-01), None
patent: 2005-86119 (2005-03-01), None
Fujita Masato
Mitsuiki Akira
Taniguchi Kensuke
Geyer Scott B
NEC Electronics Corporation
Nikmanesh Seahvosh J
Young & Thompson
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